Method for forming an electrical device and electrical devices

ABSTRACT

A method for forming an electrical device includes attaching a semiconductor die on a carrier. The method further includes dispensing a fillet material at at least one edge of the semiconductor die arranged on the carrier. The method further includes dispensing an underfill material into a gap between the semiconductor die and the carrier after dispensing the fillet material.

TECHNICAL FIELD

The present disclosure relates to semiconductor package technologies andin particular to a method for forming an electrical device andelectrical devices.

BACKGROUND

Electrical devices may suffer from unwanted spreading of underfillmaterials and large keep-out zones. Large keep-out-zones, in addition toincreasing package sizes, may pose additional constraints on multi-chippackages. For example, potential die arrangements may cause interferencein the underfilling of one or multiple dies. Complex processes mayrestrict package design or may add cost and complexity to the process.Furthermore, multiple dispensing processes may impact throughput.

BRIEF DESCRIPTION OF THE FIGURES

Some examples of apparatuses and/or methods will be described in thefollowing by way of example only, and with reference to the accompanyingfigures, in which

FIG. 1 shows a flow chart of a method for forming an electrical device;

FIGS. 2A to 2D show schematic illustrations of a method for forming anelectrical device;

FIGS. 3A and 3B show schematic illustrations of a further method forforming an electrical device;

FIGS. 4A to 4C show schematic illustrations of a method for forming anelectrical device with more than one semiconductor die;

FIGS. 5A to 5B show schematic illustrations of a method for forming anelectrical device with a plurality of semiconductor dies;

FIG. 6 shows a schematic illustration of an electrical device;

FIG. 7A shows a schematic illustration of a further electrical device;and

FIG. 7B shows a schematic illustration of an angle between a slope at amiddle of a fillet and a surface of the carrier.

DETAILED DESCRIPTION

Various examples will now be described more fully with reference to theaccompanying drawings in which some examples are illustrated. In thefigures, the thicknesses of lines, layers and/or regions may beexaggerated for clarity.

Accordingly, while examples are capable of various modifications andalternative forms, examples thereof are shown by way of example in thefigures and will herein be described in detail. It should be understood,however, that there is no intent to limit examples to the particularforms disclosed, but on the contrary, examples are to cover allmodifications, equivalents, and alternatives falling within the scope ofthe disclosure. Like numbers refer to like or similar elementsthroughout the description of the figures.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between,” “adjacent” versus “directlyadjacent,” etc.).

The terminology used herein is for the purpose of describing particularexamples only and is not intended to be limiting of example. As usedherein, the singular forms “a,” “an” and “the” are intended to includethe plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises,”“comprising,” “includes” and/or “including,” when used herein, specifythe presence of stated features, integers, steps, operations, elementsand/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which examples belong. It will befurther understood that terms, e.g., those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art.However, should the present disclosure give a specific meaning to a termdeviating from a meaning commonly understood by one of ordinary skill,this meaning is to be taken into account in the specific context thisdefinition is given herein.

Electrical components or devices are embedded in packages to provideprotection against impact and corrosion, to hold the contact pins orleads and/or to dissipate heat produced by the device, for example. Forexample, a semiconductor package may contain one or more semiconductorcomponents. Individual components may be formed in a silicon waferbefore being cut and assembled in a package. A semiconductor package mayhave only few leads or contacts for devices such as diodes, or may havehundreds of connections in case of a microprocessor, for example. Inaddition to providing connections to the semiconductor and handlingwaste heat, the semiconductor package can protect the semiconductor dieagainst the ingress of moisture, for example. Similarly,non-semiconductor electrical components (e.g. resistors, capacitors,inductors) may be arranged in packages.

FIG. 1 shows a schematic illustration of a method 100 for forming anelectrical device.

The method 100 comprises attaching 110 a semiconductor die on a carrier.The method further comprises dispensing 120 a fillet material at atleast one edge of the semiconductor die arranged on the carrier. Themethod further comprises dispensing 130 an underfill material into a gapbetween the semiconductor die and the carrier after dispensing thefillet material.

Due to the dispensing 120 of the underfill material into the gap betweenthe semiconductor die and the carrier after dispensing the filletmaterial, unwanted spreading of the underfill material may be reduced oreliminated. Thus, underfill material volumes may be reduced and sizes ofkeep out zones of the electrical device may be reduced, for example.Thus, sizes of electrical devices may be reduced, for example.

The method 100 comprises (or includes) attaching 110 the semiconductordie on the carrier before dispensing 120 the fillet material. Thesemiconductor die may be attached to the carrier by a flip-chipconnection. For example, the attaching of the semiconductor die on (oronto) the carrier may include soldering the semiconductor die to thecarrier so that at least one solder structure is located in the gapbetween the semiconductor die and the carrier. For example, at least onesolder structure (which may refer to one or more solder structures, ore.g. a plurality of solder structures) may be arranged on a firstlateral side surface (e.g. a front side) of the semiconductor die. Theat least one solder structure may be a solder bump or a solder ball, forexample. Each solder structure may be formed on (e.g. located on, ore.g. arranged on) a chip contact pad (or bump pad) of the semiconductordie. Each chip contact pad may be formed from or may include anelectrically conductive material (e.g. a metal). The attaching of thesemiconductor die on (or onto) the carrier may include arranging (ore.g. flipping) the semiconductor die so that the first lateral sidesurface (or front side) of the semiconductor die faces towards thecarrier, and then re-melting (or soldering) the one or more solderstructures to attach or connect each solder structure to at least onecarrier connection structure of the carrier. Each solder structure maybe electrically connected to a carrier connection structure (e.g. e.g.when an external voltage is applied to the carrier connectionstructure).

The semiconductor die may be attached to the at least one carrierconnection structure at a first lateral side surface of the carrier. Thecarrier may be (or may include) a printed circuit board, a flip-chipsubstrate or a lead frame, for example. The carrier may include at leastone carrier connection structure (which may refer to one or more carrierconnection structures, or e.g. a plurality of carrier connectionstructures). Each carrier connection structure may extend from the firstlateral side surface of the carrier towards (or to) an opposite secondlateral side surface of the carrier. For example, each carrierconnection structure may be configured to provide an electrical pathbetween the first lateral side surface of the carrier and the oppositesecond lateral side surface of the carrier (e.g. when an externalvoltage is applied to the carrier connection structure).

The semiconductor die arranged on the carrier may be attached (or e.g.fixed) to the carrier via the at least one solder structure beforedispensing 120 the fillet material. Before dispensing 120 the filletmaterial, a gap may be located between the semiconductor die and thecarrier. For example, the gap may be located between the first lateralside surface of the semiconductor die and the first lateral side surfaceof the carrier. An average height of the gap between the first lateralside surface of the semiconductor die and the first lateral side surfaceof the carrier may be between 10 μm and 1000 μm (or e.g. between 40 μmand 500 μm, or e.g. between 40 μm and 150 μm), for example.

The method comprises dispensing 120 a fillet material at at least oneedge of the semiconductor die (during or in a first fillet materialdispensing process). The fillet material may include (or may be or is) athixotropic material, wherein a viscosity of the (thixotropic) filletmaterial may decrease with increasing stress applied to the thixotropicmaterial. For example, a viscosity of the (thixotropic) fillet materialmay decrease during dispensing of the fillet material at the at leastone edge of the semiconductor die. After the fillet material has beendispensed at the at least one edge of the semiconductor die, a viscosityof the filler material formed at the at least one edge of thesemiconductor die may increase. For example, a viscosity of the fillermaterial located at the at least one edge of the semiconductor die afterdispensing the filler material may be higher than a viscosity of thefiller material during the dispensing of the filler material.

A thixotropic index of the fillet material may be greater than 1.0 (ore.g. greater than 1.5, or e.g. greater than 2). The thixotropic index ofthe fillet material may be a ratio between the viscosity of the fillermaterial after (or directly after) dispensing the filler material (butbefore curing the filler material) and a viscosity of the fillermaterial during the dispensing of the filler material. Due to thethixotropic index of the fillet material being greater than 1.0 (or e.g.greater than 1.5, or e.g. greater than 2), the fillet material may be(or may be considered to be, or referred to as) a high thixotropicmaterial.

The fillet material may include filler particles embedded in a matrixmaterial. For example, the filler particles may be at least partially(or completely) surrounded by the matrix material. The filler particlesmay be selected from at least one of the group comprising (or consistingof) silica particles (amorphous and/or crystalline forms), graphiteparticles, metallic particles such as alumina particles, silverparticles, nickel particles, and boron nitride particles. For example,the filler particles may include one type of the particles in the group,or alternatively a combination of two or more types of particles in thegroup. At least 10% (or e.g. at least 20%, or e.g. at least 30%) of the(volume of) the fillet material may be filler particles for example. Theremaining 90% (or e.g. 80%, or e.g. 70%) of the (volume of) the filletmaterial may be the matrix material. The matrix material may be a resinmaterial. The matrix material may be selected from at least one of thegroup comprising (or consisting of) polyepoxies, polyacrylates,polyamide, polyanhydrides, polyamines, phenolics. For example, thematrix material may include one type of material in the group, oralternatively a combination of two or more types of materials from thegroup. Optionally, there may be no hardener additive. Alternatively, oroptionally, the hardener material may be selected from one of the groupcomprising (or consisting of) amines, anhydrides, and imidazoles. Forexample, the hardener material may include one type of material in thegroup, or alternatively a combination of two or more types of materialsfrom the group.

The fillet material may be dispensed 120 at the at least one edge of thesemiconductor die so that the fillet material is formed on (e.g.directly on) and/or may cover the edge of the semiconductor die at whichit is dispensed. For example, the fillet material may be formed on (e.g.directly on) and/or may cover the vertical side of the semiconductordie. Due to the thixotropy of the fillet material, spreading of thefillet material after being dispensed at the edge of the semiconductordie may be reduced (or minimized or substantially eliminated).

The fillet material may be dispensed 120 from a jetting dispenser, froma piston dispenser, from an auger dispenser, or from a pressure-timedispenser. Optionally, other processes for dispensing the filletmaterial may be used.

A maximum width of the fillet material from the edge of thesemiconductor die after dispensing the fillet material may be less than5.0 mm (or e.g. less than 4.0 mm, or e.g. less than 3.0 mm, or e.g. lessthan 2.0 mm). The maximum width of the fillet material may be thelargest dimension of the dispensed fillet material located (or depositedor formed) at the edge of the semiconductor die measured from the edgeof the semiconductor die in a direction substantially orthogonal (orperpendicular) to the edge of the semiconductor die, or in a directionsubstantially parallel to a lateral side surface of the carrier. Due tothe thixotropy of the fillet material, a volume of fillet materialspreading into the gap between the semiconductor die and the carrier mayalso be reduced or minimalized.

The fillet material may be dispensed 120 at a first edge of thesemiconductor die and at an opposite second edge of the semiconductordie (during or in the first fillet material dispensing process), forexample. For example, the fillet material may be dispensed 120 at thefirst edge of the semiconductor die and at the second edge of thesemiconductor die before dispensing the underfill material.

The fillet material may be dispensed 120 at an edge (or each of thefirst edge and the second edge) of the semiconductor die so that thedispensed fillet material extends from a first corner of the edge to anopposite second corner of the edge at which the fillet material isdispensed. For example, the fillet material may cover the first cornerand the second corner of the edge.

Optionally, the method 100 may further include curing the filletmaterial to form a fillet at the at least one edge (e.g. at each of thefirst edge and the second edge) of the semiconductor die beforedispensing the underfill material. The fillet material may be cured byheating the fillet material or applying light to the fillet material.The fillet formed after curing may include the fillet material, whichmay be toughened or hardened by the curing process, for example. The atleast one fillet formed by the fillet material after curing may have asmaller volume than the fillet material dispensed at the at least oneedge before curing, although the reduction in volume may be small.

Alternatively or optionally, curing the fillet material to form thefillet may be carried out after dispensing the underfill materialinstead of before dispensing the underfill material.

The fillet material formable by (or formed by) the fillet material mayextend from a first corner of the edge at which it is formed to anopposite second corner of the same edge. For example, the filletmaterial may cover the first corner and the second corner of the edge atwhich it is formed. Additionally the fillet material may cover(entirely) the edge at which it is formed.

A surface of the fillet formable by (or formed by) the fillet materialat the first edge of the semiconductor die and at the second edge of thesemiconductor die may have a non-vertical slope or gradient with respectto the surface of the carrier. For example, an angle between a slope ata middle of the fillet formed by the fillet material and a surface ofthe carrier may lie between 20° and 85° (or e.g. between 30° and 75°, ore.g. between 40° and 70°). The middle of the fillet may be a point atthe surface of the fillet in a cross-section of the fillet. Thecross-section of the fillet may be at a middle of the (at least one)edge of the semiconductor die. For example, the cross-section of thefillet may be a vertical cross-section (or plane) substantiallyperpendicular to the edge of the semiconductor die. For example, thecross-section of the fillet may be located at the center (or at amidpoint) of the edge at which the cross-section of the fillet islocated. The point may be located at the surface of the fillet at 50%(or e.g. between 40% and 60%) of a height between a highest point of thefillet and a surface of the carrier. For example, the height between thehighest point of the fillet and the surface of the carrier may be adistance measured in a substantially vertical direction (e.g.substantially parallel to the edge of the semiconductor die) between thehighest point of the fillet and the surface of the carrier.

A maximum width of the at least one fillet formable by (or formed by)the fillet material from the at least one edge of the semiconductor diemay be less than 5.0 mm (or e.g. less than 4.0 mm, or e.g. less than 3.0mm, or e.g. less than 2.0 mm). For example, a maximum (or largest) widthof a (or each) fillet formable (or formed by) the fillet material froman edge of the semiconductor die on which it is formed may be less than5.0 mm (or e.g. less than 4.0 mm or e.g. less than 3.0 mm, or e.g. lessthan 2.0 mm).

The maximum width of the fillet may be measured at a middle portion ofthe at least one edge of the semiconductor die ignoring corner regionsof the semiconductor die, for example. The middle portion of the edge ofthe semiconductor die may have a dimension of 30% (or 40%, or 50%, orless than 80%) of the total length (or size or dimension) of the edge ofthe semiconductor die, for example. The middle portion of the edge ofthe semiconductor die may be located equidistant (or half way) betweencorners regions of the semiconductor die formed by the edge of thesemiconductor die.

The method 100 may further include dispensing 130 the underfill materialinto the gap between the semiconductor die and the carrier afterdispensing the fillet material, or optionally after curing the filletmaterial.

The underfill material may be different from the fillet material, forexample. The underfill material may be selected from at least one of thegroup comprising (or consisting of) polyepoxies, polyacrylates,polyamide, polyanhydrides, polyamines, phenolics, for example. Forexample, the underfill material may include one type of material in thegroup, or alternatively a combination of two or more types of materialsfrom the group.

A viscosity of the underfill material during and/or after dispensing theunderfill material, but before curing the underfill material may be lessthan or equal to 10 pascal-seconds (at 25° C.), for example. Forexample, a viscosity of the underfill material after dispensing theunderfill but before curing the underfill material may be lower than aviscosity of the fillet material after dispensing the fillet materialbut before curing the underfill material.

The underfill material may be dispensed 130 (or deposited or introduced)into the gap between the semiconductor die and the carrier from adispensing edge of the semiconductor die. The dispensing edge of thesemiconductor die may be orthogonal (e.g. perpendicular) to the firstedge of the semiconductor die and the second edge of the semiconductordie. For example, the dispensing edge may be a substantially verticalside of the semiconductor die located orthogonally to the first edge ofthe semiconductor die and the second edge of the semiconductor die.

The underfill material may be dispensed 130 from the dispensing edge ofthe semiconductor die towards an opposite third edge of thesemiconductor die. The third edge of the semiconductor die may beorthogonal (e.g. perpendicular) to the first edge of the semiconductordie and the second edge of the semiconductor die. For example, the thirdedge may be a substantially vertical side of the semiconductor dielocated orthogonally to the first edge of the semiconductor die and thesecond edge of the semiconductor die.

The underfill material may spread from the dispensing edge of thesemiconductor die towards the third edge of the semiconductor die. Thespreading of the underfill material may occur due to the low viscosityof the underfill material. The underfill material may substantially fillthe gap between the semiconductor die and the carrier. For example, thedispensed underfill material may fill at least 70% (or e.g. at least80%, or e.g. at least 90%) of the volume of the gap between thesemiconductor die and the carrier excluding solder structures located inthe gap. The underfill material may be dispensed 130 so that theunderfill material located in spaces between the solder structures. Forexample, the underfill material may laterally surround the solderstructures located in the gap between the semiconductor die and thecarrier.

The underfill material may be dispensed 130 from a jetting dispenser,from a piston dispenser, from an auger dispenser, or from apressure-time dispenser. Optionally, other processes for dispensing theunderfill material may be used.

The method 100 may further include curing the underfill material byheating the underfill material or applying light to the underfillmaterial. If the fillet material was not cured before dispensing theunderfill material (e.g. if curing the fillet material was omittedbefore dispensing the underfill material), the fillet material and theunderfill material may be cured in the same curing process afterdispensing the underfill material.

The curing of the underfill material may cause a fillet formable (ore.g. formed by, or e.g. comprising) the underfill material to be formedat the dispensing edge of the semiconductor die. For example, the filletformable (or formed) by the underfill material may be located at or onthe dispensing edge (e.g. the vertical side) of the semiconductor die.If the underfill material is formed at the third edge of thesemiconductor die (e.g. by spreading from the dispensing edge to thethird edge), the curing of the underfill material may cause a filletformable (or e.g. formed by, or e.g. comprising) the underfill materialto be formed at the third edge of the semiconductor die. For example,the fillet formable (or formed) by the underfill material may be locatedat or on the third edge (e.g. the vertical side) of the semiconductordie.

A surface of the fillet formable by (or formed by) the underfillmaterial at the dispensing edge of the semiconductor die and/or at thethird edge of the semiconductor die may have a non-vertical slope orgradient with respect to the surface of the carrier. For example, anangle between a slope at a middle of the fillet formed by the underfillmaterial and a surface of the carrier may lie between 20° and 85° (ore.g. between 30° and 75°, or e.g. between 40° and 70°). The middle ofthe fillet may be a point at the surface of the fillet in across-section of the fillet. The cross-section of the fillet may be at amiddle of the at least one edge of the semiconductor die. For example,the cross-section of the fillet may be a vertical cross-sectionsubstantially perpendicular to the edge of the semiconductor die. Forexample, the cross-section of the fillet may be located at the center(or at a midpoint) of the dispensing edge of the semiconductor die. Thepoint may be located at the surface of the fillet at 50% (or e.g.between 40% and 60%) of a height between a highest point of the filletand a surface of the carrier. For example, the height between thehighest point of the fillet and the surface of the carrier may be adistance measured in a substantially vertical direction (e.g.substantially parallel to an edge of the semiconductor die) between thehighest point of the fillet and the surface of the carrier.

A maximum width of the at least one fillet formable by (or formed by)the underfill material from the at least one edge of the semiconductordie may be less than 5.0 mm (or e.g. less than 3.0 mm, or e.g. less than2.0 mm). For example, a maximum (or largest) width of a (or each) filletformable (or formed by) the underfill material from an edge of thesemiconductor die on which it is formed may be less than 5.0 mm (or e.g.less than 4.0 mm, or e.g. less than 3.0 mm, or e.g. less than 2.0 mm).For example, a maximum width of the at least one fillet formable by theunderfill at a middle portion of the at least one edge of thesemiconductor die may be less than 5.0 mm (or e.g. less than 4.0 mm, ore.g. less than 3.0 mm, or e.g. less than 2.0 mm). The middle portion ofthe edge of the semiconductor die may have a dimension of 30% (or 40%,or 50%, or less than 80%) of the total length (or size or dimension) ofthe edge of the semiconductor die, for example. The middle portion ofthe edge of the semiconductor die may be located equidistant (or halfway) between two opposite edges of the semiconductor die. For example,the two opposite edges of the semiconductor die may be orthogonal to theedge at which the cross-section of the fillet is located. For example,the middle portion of the dispensing edge of the semiconductor die maybe located equidistant (or half way) between the first edge of thesemiconductor die and the second edge of the semiconductor die.

Optionally, the method may optionally further include dispensing thefillet material (during or in a second fillet material dispensingprocess) at the third edge of the semiconductor die and/or at thedispensing edge of the semiconductor die after dispensing the underfillmaterial. For example, the fillet material may be dispensed at thedispensing edge of the semiconductor die after dispensing the underfillmaterial. For example, at least part of the fillet material may bedispensed onto (or e.g. over, or e.g. on, or e.g. to cover) at leastpart of the underfill material already dispensed or located at thedispensing edge of the semiconductor die. Additionally or optionally, atleast part of the fillet material may be dispensed onto (or e.g. over,or e.g. on, or e.g. to cover) at least part of the underfill materialalready located at the third edge of the semiconductor die.

The fillet material may be cured after dispensing the fillet material atthe dispensing edge of the semiconductor die or at the third edge of thesemiconductor die to form a fillet formable by (or formed by orcomprising) the fillet material at the dispensing edge of thesemiconductor die and/or at the third edge of the semiconductor die.

Optionally, the fillet material and the underfill material may be curedin the same curing process after dispensing the fillet material at thedispensing edge of the semiconductor die or at the third edge of thesemiconductor die.

Optionally, the fillet formed at the dispensing edge and/or at the thirdedge of the semiconductor die after curing may include the cured filletmaterial located on the cured underfill material. For example, thefillet formed at the dispensing edge and/or at the third edge mayinclude a bottom (or lower) fillet portion formable by (or formed by orcomprising) the underfill material and a top (or upper) fillet portionformable by (or formed by or comprising) the fillet material.

Optionally, the fillet material (dispensed during or in the first filletmaterial dispensing process) may be dispensed to form a fillet structurecomprising the fillet material between the first semiconductor die and aneighboring second semiconductor die arranged on the carrier. Forexample, the fillet material may be dispensed to form a fillet structurebetween an edge of the first semiconductor die and a neighboring (oradjacent) edge of the second semiconductor die. For example, a firstportion of the fillet structure may be dispensed at an (second) edge ofthe first semiconductor die and a second portion of the fillet structuremay be dispensed at an (first) edge of the second semiconductor die. Anaverage distance between the neighboring (or adjacent) edges of thefirst semiconductor die and the second semiconductor die may be greaterthan 0.1 mm (or e.g. greater than 0.5 mm, or e.g. greater than 1.0 mm).

Optionally, the method may be used to form an electrical devicecomprising a plurality of dies. For example, the examples describedherein may be used for forming a plurality of fillets for a plurality ofsemiconductor dies. For example, the method may include dispensing thefillet material (during the first fillet material dispensing process) ata plurality of first edges of a plurality of semiconductor dies and at aplurality of opposite second edge of the plurality of semiconductordies. A fillet structure may be formed between neighboring semiconductordies of the plurality of semiconductor dies. After dispensing the filletmaterial at the first edges of the plurality of semiconductor dies andthe second edges of the plurality of semiconductor dies, underfillmaterial may be dispensed (optionally simultaneously) at a plurality ofdispensing edges of the plurality of semiconductor dies. Optionally, theplurality of semiconductor dies may be arranged on the carrier so thatthe dispensing edges of semiconductor dies face the same direction. Thedispensing material may spread into (or through) the plurality of gapbetween the plurality of semiconductors does and the carrier. Forexample, the dispensing material may spread from the plurality ofdispensing edges towards a plurality of third edges of the plurality ofdies. After dispensing the underfill material, the underfill materialand the fillet material may be cured. Alternatively, the fillet materialmay be cured before dispensing the underfill material.

Optionally, after dispensing and curing the underfill material, thefiller material may be dispensed (during the second fillet materialdispensing process) at a plurality of third edges of the plurality ofsemiconductor dies.

In all the examples described herein, the (or each) edge of thesemiconductor die may refer to a substantially vertical side (orvertical edge) of the semiconductor die substantially orthogonal to thefirst lateral side surface of the semiconductor die and the secondlateral side surface of the semiconductor die. A substantiallyrectangular (or square) semiconductor die may have four edgessubstantially orthogonal to the first lateral side surface of thesemiconductor die and the second lateral side surface of thesemiconductor die, for example. The edge (or vertical edge) of thesemiconductor die may result from separating (or dicing) thesemiconductor die from other semiconductor dies of a semiconductorwafer, for example.

A lateral side surface of the semiconductor die may be a substantiallyeven plane (e.g. neglecting unevenness of the semiconductor structuredue to the manufacturing process and trenches). In comparison to abasically vertical edge of the semiconductor die, the lateral sidesurface may be a basically horizontal surface extending laterally. Thelateral side surface of the semiconductor die may be substantiallyorthogonal or perpendicular to the vertical edge of the semiconductordie. The lateral dimension of the lateral surface of the semiconductordie may be more than 100 times larger (or more than 1000 times or morethan 10000 times) than a basically vertical edge of the semiconductordie, for example.

The method described in connection with FIG. 1 may use (at least) twodifferent materials, instead of (only) underfills, to underfill chipgaps and to form protective fillets around the die edges particularly inthe die corners where stress levels are the highest. Thus, unwantedspreading of the underfill, which negatively impacts keep-out-zones, andwhich is primarily due to simultaneously providing underfill for chipgaps and for forming protective fillets, may be avoided, for example. Inparticular, underfill requirements may drive the underfill viscosity tobe low, while fillet requirements may drive the filler loading to behigh for fillet strength. Due to the use of only one underfill materialfor both the fillets and the underfill, the low viscosity of theunderfill material may result in high wetting of the substrate (e.g. thecarrier), while the filleting requirement may result in large materialvolumes. To avoid forming voids in the chip gap, the underfill may bedispensed on one side of the die thereby creating an asymmetrickeep-out-zone with a very large dimension on one side of the die (termedthe tongue side 206C). These large keep-out-zones, in addition toincreasing package sizes, pose additional constraints on multi-chippackages. For example, merging underfill keep-out-zones for multipledies may have to be carefully planned out as many potential diearrangements cause interference in the underfilling of one or multipledies.

By using at least two different materials as described in connectionwith FIG. 1, various complexities may be avoided. For example, theforming of openings in the solder resist to a ground plane whichrestricts package design, a dispensing of a barrier material which addscost and process complexity, and/or combining multiple passes of lowvolume dispenses which impacts throughput, may be avoided, for example.

The various examples described herein provide a two-material processwhere the competing requirements (for providing an underfill andprotective fillets) are met separately by (at least) two materials,thereby decoupling the material properties and allowing for minimizingthe underfill spread on all die sides, for example.

In the examples described herein, (at least) two primary dispenseprocesses may be used for products with a low flow distance. Thedispense processes may include a prefillet dispense of a heavily loadedhigh-thixotropic heavily-loaded material and an underfill dispense of alow-viscosity underfill. The prefillet may be first applied on the sidesperpendicular to the desired underfill dispense side, therebyrestricting the subsequent underfill flow to proceed under the die only.The high thixotropy may constrain the spread of this material therebyresulting in low keep-out-zones on (at least) two sides of the die(206A, 206B), for example.

Freed from the need to provide material for filleting, the underfilldispense may then also be a low volume dispense, thereby achieving lowkeep-out-zones on the remaining 2 sides of the die. For products withhigh flow distances (e.g. longer than 15 mm) and/or associated highsidewall fillet stresses, an additional fillet dispense on either theside opposite the underfill dispensing side and/or the underfilldispense side may be carried out.

Due to the examples described herein, the need for solder resistopenings may be avoided. Solder resist openings may impact productdesign because a ground layer must be included immediately below thesolder resist. Additionally, these openings may have limitedeffectiveness as the resistance to wetting is quickly overcome whensufficient underfill builds up at the edge of the opening. For thisreason, these openings may only be used to stop the tails of theunderfill spread, for example. Furthermore, the areas required for theopenings must be part of the keep-out-zone definition which limits theeffectiveness of this approach.

Due to the examples described herein, other additional processes mayalso be avoided. For example, the dispensing of barrier materials (suchas the jetting and flash-cure of an ink barrier) may involve addingentire processes. This approach may suffer from the same limitations asthe solder resist openings. The examples described herein do not involvea ground plane layer and, thus, may be less restrictive on packagedesign than the solder resist opening options, for example.

In the examples described herein, the prefillet dispense 120 may beincorporated into a standard underfill process flow. Thus, it does notinvolve an extra process like the dispensing of barrier materials.Furthermore, the keep-out-zones may be reduced on all four sides of thedie. For some use-cases like intermediate die-to-die spacing onmulti-chip packages, the examples described herein may act as an enablerof die-to-die configurations that are not possible to achieve with theexamples described herein. Furthermore, the die-to-component spacing oncomplex packages may be reduced due to the reduced keep-out-zones. Thesecomponents may be other electronic components that may includecapacitors, inductors, resistors, electronic modules, etc.

In addition, the materials may be chosen to ensure the compatibility ofthe two materials (the underfill material and the fillet material), aswell as suitability of the two materials for processing (dispensability,outgassing). The fillet material may be chosen to balance the prefilletthixotropy to avoid capillary action while still wetting the die edges,and to meet targets for mechanical properties in the cured state. Theunderfill material may be selected based on material requirements of theunderfill in its liquid state (viscosity, contact angle), as well as tomeet targets for mechanical properties in the cured state. Processes maybe applied to achieve low volumes required for low keep-out-zones, andfor the dispensing of highly-loaded high-thixotropic materials.

FIGS. 2A to 2D show schematic illustrations of a method for forming anelectrical device according to an example. For example, the method mayinclude dispense sequences on an electrical device comprising a singledie (e.g. single die products).

As shown in FIG. 2A, the method may comprise attaching a semiconductordie 201 on a carrier 202. As described in connection with FIG. 1, thesemiconductor die 201 may be attached to the carrier 202 by a flip-chipconnection. For example, the attaching of the semiconductor die 201 on(or onto) the carrier 202 may include soldering the semiconductor die tothe carrier so that at least one solder structure 203 is located in thegap 204 between the semiconductor die 201 and the carrier 202.

As shown in FIG. 2A (top view) and FIG. 2B (cross-sectional view), themethod further comprises dispensing a fillet material 205 at at leastone edge of the semiconductor die 201 arranged on the carrier. Asdescribed in connection with FIG. 1, the fillet material 205 may bedispensed at a first edge 206A of the semiconductor die 201 and at anopposite second edge 206B of the semiconductor die 201, for example.

The pre-fillets may be dispensed on the sides (206A, 206B) perpendicularto the chosen underfill dispense (or dispensing) side. This material(the fillet material 205) may wet the die and form the side fillets, andthe thixotropic nature of the fillet material 205 may resist thecapillary force created by the chip gap, for example. These fillets mayform continuous side barriers that constrain the underfill and not allowit to spread out on these two sides (206A, 206B), for example.Additionally, this material may form the fillets at all four diecorners, which are typically the locations of the highest stress on thedie, for example.

Optionally, the method may further include curing the fillet material205 to form a first fillet at the first edge of the semiconductor edgeof the semiconductor die and a second fillet at the second edge of thesemiconductor die before dispensing the underfill material.Alternatively or optionally, curing the fillet material may be carriedout after dispensing the underfill material instead of before dispensingthe underfill material.

As shown in FIGS. 2C (top view) and 2D (cross-sectional view), themethod further comprises dispensing an underfill material 207 into thegap 204 between the semiconductor die 201 and the carrier 202 afterdispensing the fillet material 205.

The underfill material may be dispensed (or deposited or introduced)into the gap 204 between the semiconductor die 201 and the carrier 202from a dispensing edge 206C of the semiconductor die 201. The dispensingedge 206C of the semiconductor die 201 may be orthogonal to the firstedge 206A of the semiconductor die 201 and the second edge 206B of thesemiconductor die 201.

The underfill material 207 may be dispensed from the dispensing edge206C of the semiconductor die 201 towards an opposite third edge 206D ofthe semiconductor die 201. The third edge 206D of the semiconductor die201 may be orthogonal to the first edge 206A of the semiconductor die201 and the second edge 206B of the semiconductor die 201.

The dispensed underfill material 207 may spread from the dispensing edge206C of the semiconductor die 201 towards the third edge 206D of thesemiconductor die 201. For example, the dispensed underfill material 207may substantially fill the gap between the semiconductor die 201 and thecarrier 202. For example, the dispensed underfill material may fill atleast 70% (or e.g. at least 80%, or e.g. at least 90%) of the volume ofthe gap between the semiconductor die and the carrier excluding solderstructures located in the gap.

The underfill material may be dispensed on the chosen side (e.g. thedispensing edge 206C) with sufficient volume to fill (or substantiallyfill) the chip gap and to form the remaining fillets (on sides 206C,20CD). For products with low sidewall stresses and/or low flowdistances, this is may be the final process and further filletdispensing processes may be avoided.

An average dimension of the edges of the semiconductor die may liebetween 3.0 mm and 100.0 mm, for example. Semiconductor dies with lowflow distances may refer to semiconductor dies, where an average lateraldimension of the edges of the semiconductor die 201 is less than 15 mm.

The underfill material 207 may be dispensed at the dispensing edge 206Cof the semiconductor die 201 after curing the fillet material 205. Ifthe fillet material 205 was not cured before dispensing the underfillmaterial 207 (e.g. if curing the fillet material was omitted beforedispensing the underfill material 207), the fillet material 205 and theunderfill material 207 may be cured in the same curing process afterdispensing the underfill material 207.

More details and aspects are mentioned in connection with the examplesdescribed above or below. The examples shown in FIGS. 2A to 2D maycomprise one or more optional additional features corresponding to oneor more aspects mentioned in connection with the proposed concept or oneor more examples described above (e.g. FIG. 1) or below (FIGS. 3A to 7).

FIG. 3A (cross-section) and FIG. 3B (top view) show schematicillustrations of a further method for forming an electrical deviceaccording to an example.

The method may include one or more or all of the features of the methoddescribed in connection with FIGS. 2A to 2D. In addition, the method mayfurther include dispensing the fillet material 205 (during or in asecond fillet material dispensing process) at the third edge 206D of thesemiconductor die 201 after dispensing the underfill material 207, forexample.

For products with high sidewall stresses, the two-part process may notbe sufficient. For example, either the underfill may not formsufficiently strong fillets and/or the underfill may not form asufficient fillet on the side opposite to the dispense side (at thirdedge 206D), or the spread of the underfill on the dispense side 206C maynot be as low as desired. In either or any of these cases, a furtherprocess for the dispensing of the prefillet (with fillet material) maybe carried out. The underfill fillet on the side opposite to thedispense side may be insufficient, in which case a fillet dispense maybe added. This may be similar to the last part in the current processfor underfilling parts with long flow distances.

It may be possible that the underfill material 207 dispensed from thedispensing edge 206C of the semiconductor die may not reach the thirdedge 206D of the semiconductor die 201, (e.g. due to long flowdistances) for example. In which case, the fillet material 205 may bedispensed at (or e.g. directly on) the third edge 206D of thesemiconductor die 201. It may alternatively be possible that theunderfill material 207 reaching the third edge 206D of the semiconductordie 201 may be insufficient to form a fillet at or covering the thirdedge 206D of the semiconductor die. In which case, at least part of thefillet material 205 dispensed (during or in the second fillet materialdispensing process) at the third edge 206D may be dispensed onto (ore.g. over, or e.g. on, or e.g. to cover) at least part of the underfillmaterial 207 at the third edge 206D of the semiconductor die 201.

The dispensing of the underfill material 207 may lead to an asymmetricaldistribution of the underfill material 207 at the dispensing edge 206Cand at the third edge 206D. For example, more underfill material 207 mayaccumulate at the dispensing edge 206C during or after dispensing theunderfill material 207 than at the third edge 206D. If the underfillmaterial 207 dispensed at the dispensing edge 206C is sufficient to forma fillet at the dispensing edge 206C, no fillet material 205 isdispensed at the dispensing edge 206C after dispensing the underfillmaterial 207. Optionally, if the underfill material 207 dispensed at thedispensing edge 206C is insufficient to form a fillet at the dispensingedge 206C, fillet material 205 may be dispensed at the dispensing edge206C after dispensing the underfill material 207. Optionally, at leastpart of the fillet material 205 may be dispensed onto (or e.g. over, ore.g. on,) at least part of the underfill material 207 already dispensedor located at the dispensing edge 206C of the semiconductor die 201.

The fillet material 205 may be cured after dispensing the filletmaterial 205 at the third edge 206D of the semiconductor die 201 and/orat the dispensing edge 206C of the semiconductor die 201 to form afillet formable by the fillet material 205 at the third edge 206D of thesemiconductor die 201 and/or at the dispensing edge 206C of thesemiconductor die 201. Optionally, the fillet material 205 and theunderfill material 207 may be cured in the same curing process afterdispensing the fillet material 205 at the dispensing edge 206C of thesemiconductor die 201 and/or at the third edge 206D of the semiconductordie 201.

Semiconductor dies with long flow distances may refer to semiconductordies, where an average lateral dimension of the edges of thesemiconductor die 201 is greater than 15 mm.

More details and aspects are mentioned in connection with the examplesdescribed above or below. The examples shown in FIGS. 3A to 3B maycomprise one or more optional additional features corresponding to oneor more aspects mentioned in connection with the proposed concept or oneor more examples described above (e.g. FIGS. 1 to 2D) or below (FIGS. 4Ato 7).

FIGS. 4A to 4C show top view schematic illustrations of a method forforming an electrical device according to an example.

The examples described may be extended to multi-chip packages (MCPs)where undesirable flow of underfill material may put restrictions ondie-to-die spacing and die-locations configurations. For example,restrictions on die-to-die spacing, d, may be avoided.

The fillet material may be dispensed (e.g. during or in the first filletmaterial dispensing process) to form a fillet structure 405 comprisingthe fillet material between the first semiconductor die 201 and aneighboring second semiconductor die 201 arranged on the carrier. Forexample, the fillet material may be dispensed to form the filletstructure 405 between an edge of the first semiconductor die 201 and aneighboring (or adjacent) edge of the second semiconductor die 201. Forexample, a first portion of the fillet structure 405 may be dispensed ata second edge 206B of the first semiconductor die 201 and a secondportion of the fillet structure 405 may be dispensed at a first edge206A of the second semiconductor die 201.

For example, an average distance, d, between the neighboring (oradjacent) edge of the first semiconductor die 201 and the secondsemiconductor die 201 may lie between 0.5 mm and 6.0 mm (or e.g. between1.0 mm and 5.0 mm, or e.g. between 2.0 mm and 3.0 mm). The use of a highthixotropic index (HTI) fillet material in the space between the diesenables die configurations with d1<d<d2, for example.

As shown in FIGS. 4B and 4C (e.g. use-case 1), the intermediatedie-to-die spacing may be restricted by using a single underfilldispense material.

With the examples described herein, the distance between neighboringsemiconductor dies (the die-to-die spacing) does not have to be below alower threshold (e.g. d≦d1) such that the two dies can be treated as oneas shown in FIG. 4B. d1 may be a value which is greater than 0.5 mm, forexample.

With the examples described herein, the distance between neighboringsemiconductor dies (the die-to-die spacing) does not have to be above ahigher threshold (e.g. d≧d2) such that the keep-out-zones are completelyseparated, effectively decoupling the underfilling of both dies as shownin FIG. 4B. d2 may be a value which is less than 6.0 mm, for example.

More details and aspects are mentioned in connection with the examplesdescribed above or below. The examples shown in FIGS. 4A to 4C maycomprise one or more optional additional features corresponding to oneor more aspects mentioned in connection with the proposed concept or oneor more examples described above (e.g. FIGS. 1 to 3B) or below (FIGS. 5Ato 7).

FIGS. 5A and 5B show top view schematic illustrations of a method forforming an electrical device according to an example. The method may beused to form an electrical device comprising a plurality of dies 201,for example.

As shown in FIG. 5A, the method may include attaching the plurality ofsemiconductor dies 201 on the carrier. After attaching the plurality ofsemiconductor dies 201 on the carrier, the method may include dispensingthe fillet material 205 (during a first fillet material dispensingprocess) at a plurality of first edges 206A of the plurality ofsemiconductor dies 201 and at plurality of opposite second edges 206B ofthe plurality of semiconductor dies 201. For example, a first portion ofeach fillet structure between neighboring semiconductor dies may bedispensed at a second edge 206B of the first semiconductor die 201 and asecond portion of the fillet structure may be dispensed at a first edge206A of the neighboring second semiconductor die 201.

An average distance between the neighboring (or adjacent) edges of theneighboring semiconductor dies of the plurality of semiconductor diesmay be greater than 0.1 mm, for example.

After dispensing the fillet material 205 at the first edges of theplurality of semiconductor dies and at the second edges of the pluralityof semiconductor dies, underfill material 207 may be dispensed at thedispensing edges 206C (also referred to as tongue edges) of theplurality of semiconductor dies 201. Optionally, the plurality ofsemiconductor dies 201 may be arranged on the carrier so that thedispensing edges 206C of semiconductor dies 201 face the same direction.Furthermore, the underfill flow may be guided in a direction from thedispensing edges 206C of the plurality of dies towards (or to) the thirdedges 206D of the plurality of dies.

The filler material 205 dispensed during the first fillet materialdispensing process may be cured to form a plurality of fillets formableby the filler material 205 at the first edges 206A of the plurality ofsemiconductor dies 201 and at the second edges 206B of the plurality ofsemiconductor dies 201. Optionally, the underfill material 207 dispensedduring the second fillet material dispensing process may be cured toform a plurality of fillets formable by the underfill material 207 atthe dispensing edges 206C of the plurality of semiconductor dies 201 ofthe plurality of semiconductor dies 201.

Optionally, after dispensing and/or curing the underfill material 207,the filler material 205 may be dispensed (during a second filletmaterial dispensing process) at the plurality of third edges 206D of theplurality of semiconductor dies 201. Optionally, at least part of thefillet material 205 dispensed at the third edges 206D of the pluralityof semiconductor dies 201 may be dispensed onto (or e.g. over, or e.g.on, or e.g. to cover) at least part of any underfill material 207 at thethird edges 206D of the plurality of semiconductor dies 201.

Additionally or optionally, the fillet material 205 (during the secondfillet material dispensing process or a subsequent fillet materialdispensing process) may be dispensed at the dispensing edges 206C of theplurality of semiconductor dies 201 after dispensing the underfillmaterial 207. Optionally, at least part of the fillet material 205dispensed at the dispensing edges 206C of the plurality of semiconductordies 201 may be dispensed onto (or e.g. over, or e.g. on, or e.g. tocover) at least part of any underfill material 207 at the dispensingedges 206C of the plurality of semiconductor dies 201.

The examples described in connection with FIG. 5A may be applied tohigher count multi-chip packages (MCPs), by guiding underfill flow inone-direction for all dies (from tongue to back-wall). This may beachieved by the dispensing sequences described in connection with FIG.5A. Prefillet material may be dispensed on the side walls to stop anysideways flow (vertical edges), followed by underfill on the tongue sidefor all dies and, lastly, if necessary, on the back-wall (e.g. the thirdedges 206D). Thus, fillets formable by only underfill material whichhave larger widths (and formed on all sides of the semiconductor dies)as shown in FIG. 5B may be avoided, for example.

More details and aspects are mentioned in connection with the examplesdescribed above or below. The examples shown in FIGS. 5A to 5C maycomprise one or more optional additional features corresponding to oneor more aspects mentioned in connection with the proposed concept or oneor more examples described above (e.g. FIGS. 1 to 4C) or below (FIGS. 6to 7).

FIG. 6 shows a schematic illustration of an electrical device 600according to an example.

The electrical device 600 comprises a semiconductor die 201 arranged ona carrier 202. The electrical device 600 further comprises at least onefillet 605 located at at least one edge 206 of the semiconductor die201. The at least one fillet 605 is formable by a thixotropic filletmaterial. The electrical device 600 further comprises an underfillmaterial located in a gap between the semiconductor die 201 and thecarrier 202.

Due to the electrical device comprising at least one fillet formable bythe thixotropic fillet material, underfill material volumes may bereduced and sizes of keep out zones of the electrical device may bereduced. Thus, the size of the electrical device may be reduced, forexample,

The at least one fillet is formable by (or may be formed by) thethixotropic fillet material. In other words, the material of the atleast one fillet has one or properties that can be formed by thethixotropic fillet material.

The thixotropic fillet material may be similar or identical to thefillet material described in connection with FIGS. 1A to 5B. Thethixotropic fillet material may be different from the underfillmaterial, for example.

The thixotropic fillet material may include filler particles embedded ina matrix material. For example, the filler particles may be at leastpartially (or completely) surrounded by the matrix material. The fillerparticles may be selected from at least one of the group comprising (orconsisting of) silica particles (amorphous and/or crystalline forms),graphite, metallic particles such as alumina, silver, nickel, and boronnitride particles. For example, the filler particles may include onetype of the particles in the group, or alternatively a combination oftwo or more types of particles in the group. At least 10% (or e.g. atleast 20%, or e.g. at least 30%) of the (volume of) the fillet materialmay be filler particles for example. The remaining 90% (or e.g. 80%, ore.g. 70%) of the (volume of) the fillet material may be the matrixmaterial. The matrix material may be selected from at least one of thegroup comprising (or consisting of) polyepoxies, polyacrylates,polyamide, polyanhydrides, polyamines, phenolics. For example, thematrix material may include one type of material in the group, oralternatively a combination of two or more types of materials from thegroup. Optionally, there may be no hardener additive. Alternatively oroptionally, the hardener material may be selected from one of the groupcomprising (or consisting of) amines, anhydrides, and imidazoles. Forexample, the hardener material may include one type of material in thegroup, or alternatively a combination of two or more types of materialsfrom the group.

The underfill material 607 may be selected from at least one of thegroup comprising (or consisting of) polyepoxies, polyacrylates,polyamide, polyanhydrides, polyamines, phenolics, for example. Forexample, the underfill material 607 may include one type of material inthe group, or alternatively a combination of two or more types ofmaterials from the group.

The underfill material 607 may fill at least 70% (or e.g. at least 80%,or e.g. at least 90%) of the volume of the gap between the semiconductordie 201 and the carrier 202 excluding solder structures located in thegap.

A first fillet 605 formable by the thixotropic fillet material may belocated at a first edge of the semiconductor die 201 and a second filletformable by the thixotropic fillet material may be located at anopposite second edge of the semiconductor die 201, for example.

The electrical device may include a fillet structure formable by thethixotropic fillet material located between the (first) semiconductordie and a neighboring second semiconductor die. A first portion of thefillet structure may form a fillet 605 located at an edge of the firstsemiconductor die 201, and a second portion of the fillet structure mayform a fillet 605 located at an edge of the second semiconductor die201.

An average distance between the first semiconductor die and the secondsemiconductor die may be greater than 0.1 mm (or e.g. greater than 0.2mm, or e.g. greater than 0.4 mm).

The carrier may be a printed circuit board, a flip-chip substrate or alead frame, for example.

The semiconductor die 201 may be connected to the carrier 202 via atleast one solder structure located in the gap between the semiconductordie 201 and the carrier 202. The at least one solder structure (whichmay refer to one or more solder structures, or e.g. a plurality ofsolder structures) may be arranged on a first lateral side surface (e.g.a front side) of the semiconductor die 201. The at least one solderstructure may be a solder bump or a solder ball, for example.

An angle between a slope at a middle of the fillet 605 formed by thefillet material and a surface of the carrier may lie between 20° and 85°(or e.g. between 30° and 75°, or e.g. between 40° and 70°). The middleof the fillet 605 may be a point at the surface of the fillet in across-section of the fillet. The cross-section of the fillet 605 may beat a middle of the edge 206 of the semiconductor die 201. For example,the cross-section of the fillet 605 may be a vertical cross-sectionsubstantially perpendicular to the edge 206 of the semiconductor die201. For example, the cross-section of the fillet may be located at thecenter (or at a midpoint) of the edge at which the cross-section of thefillet is located. The point may be located at the surface of the filletat 50% (or e.g. between 40% and 60%) of a height between a highest pointof the fillet and a surface of the carrier. For example, the heightbetween the highest point of the fillet and the surface of the carriermay be a distance measured in a substantially vertical direction (e.g.substantially parallel to an edge of the semiconductor die) between thehighest point of the fillet and the surface of the carrier.

A maximum (or average) width of the at least one fillet formable by (orformed by) the fillet material from the at least one edge of thesemiconductor die may be less than 5.0 mm (or e.g. less than 4.0 mm, ore.g. less than 3.0 mm, or e.g. less than 2.0 mm). For example, a maximum(or largest) width of a (or each) fillet formable (or formed by) thefillet material from an edge of the semiconductor die on which it isformed may be less than 5.0 mm (or e.g. less than 4.0 mm, or e.g. lessthan 3.0 mm, or e.g. less than 2.0 mm). For example, a maximum width ofthe at least one fillet formable by the fillet at a middle portion ofthe edge of the semiconductor die may be less than 5.0 mm (or e.g. lessthan 4.0 mm, or e.g. less than 3.0 mm, or e.g. less than 2.0 mm). Themiddle portion of the edge of the semiconductor die may have a dimensionof 30% (or 40%, or 50%, or less than 80%) of the total length (or sizeor dimension) of the edge of the semiconductor die, for example. Themiddle portion of the edge of the semiconductor die may be locatedequidistant (or half way) between corners regions of the semiconductordie formed by the edge of the semiconductor die.

Optionally, at least one fillet formable by the underfill material 607may be located at at least one further edge of the semiconductor die.For example, a fillet formable by the underfill material 607 may belocated at a dispensing edge of the semiconductor die the semiconductordie 201.

An angle between a slope at a middle of the fillet 605 formed by thefillet material and a surface of the carrier may be at least 10% (ore.g. at least 20% larger than, or e.g. at least 30% larger than) anangle between a slope at a middle of the fillet formed by the underfillmaterial 607 and the surface of the carrier 202.

An angle between the slope at a middle of the fillet formed by theunderfill material 607 and the surface (e.g. a first lateral sidesurface) of the carrier 202 may lie between 20° and 85° (or e.g. between30° and 75°, or e.g. between 40° and 70°). The middle of the filletformed by the underfill material 607 may be a point at the surface ofthe fillet in a cross-section of the fillet. The cross-section of thefillet formed by the underfill material may be at a middle of the atleast one further edge of the semiconductor die 201. For example, thecross-section of the fillet formed by the underfill material may be avertical cross-section substantially perpendicular to the further edge(e.g. the dispensing edge) of the semiconductor die. For example, thecross-section of the fillet may be located at the center (or at amidpoint) of the third edge of the semiconductor die. The point may belocated at the surface of the fillet at 50% (or e.g. between 40% and60%) of a height between a highest point of the fillet and a surface ofthe carrier 202. For example, the height between the highest point ofthe fillet and the surface of the carrier 202 may be a distance measuredin a substantially vertical direction (e.g. substantially parallel to anedge of the semiconductor die) between the highest point of the filletand the surface of the carrier 202.

A maximum (or average) width of the at least one fillet formable by (orformed by) the underfill material 607 from the at least one edge of thesemiconductor die 201 may be at least 10% (or e.g. at least 20% largerthan, or e.g. at least 30% larger than) a maximum (or average) width ofthe at least one fillet formable by (or formed by) the fillet materialfrom the at least one edge of the semiconductor die.

A maximum (or average) width of the at least one fillet formable by (orformed by) the underfill material 607 from the at least one edge of thesemiconductor die 201 may be less than 5.0 mm (or e.g. less than 4.0 mm,or e.g. less than 3.0 mm, or e.g. less than 2.0 mm). For example, amaximum (or largest) width of a (or each) fillet formable (or formed by)the underfill material 607 from an edge of the semiconductor die 201 onwhich it is formed may be less than 5.0 mm (or e.g. less than 4.0 mm, ore.g. less than 3.0 mm, or e.g. less than 2.0 mm). For example, a maximumwidth of the at least one fillet formable by the underfill at a middleportion of the edge of the semiconductor die 201 may be less than 5.0 mm(or e.g. less than 4.0 mm, or e.g. less than 3.0 mm, or e.g. less than2.0 mm). The middle portion of the edge of the semiconductor die mayhave a dimension of 30% (or 40%, or 50%, or less than 80%) of the totallength (or size or dimension) of the edge of the semiconductor die, forexample. The middle portion of the edge of the semiconductor die may belocated equidistant (or half way) between corners regions of thesemiconductor die formed by the edge of the semiconductor die. Forexample, the middle portion of the dispensing edge of the semiconductordie may be located equidistant (or half way) between the first edge ofthe semiconductor die and the second edge of the semiconductor die.

An average width of a keep out zone at an edge of the semiconductor dieat which the at least one fillet formed by the thixotropic filletmaterial is formed may be smaller than an average width of a keep outzone at an edge of the semiconductor die at which at least one filletformed by the underfill material is formed.

A keep out zone may be a part of the carrier 202 or a part of theelectrical device without any semiconductor dies, and/or without anyelectrically conductive structures, and/or without any electricalcomponents, for example.

In the examples, fillets formable (fully or at least partially) by thefillet material may be located at at least two edges (e.g. two edges, orthree edges or four edges) of the semiconductor die. Optionally, filletsformable (fully or at least partially) by the underfill material may belocated at at least one edge (e.g. one edge, or e.g. two edges) of thesemiconductor die.

More details and aspects are mentioned in connection with the examplesdescribed above or below. The examples shown in FIGS. 1 to 6 maycomprise one or more optional additional features corresponding to oneor more aspects mentioned in connection with the proposed concept or oneor more examples described above (e.g. FIGS. 1 to 5B) or below (FIG. 7).

FIG. 7A shows a schematic illustration of an electrical device 700according to an example.

The electrical device 700 comprises a semiconductor die 201 arranged ona carrier 202. The electrical device 700 further comprises a fillet 705located at at least one edge 206 of the semiconductor die 201. An anglebetween a slope at a middle of the fillet 705 and a surface 708 of thecarrier lies between 20° and 85° (or e.g. between 30° and 75°, or e.g.between 40° and 70°).

Due to the electrical device comprising a fillet having an angle betweena slope at a middle of the fillet 705 and a surface 708 of the carrierlies between 20° and 85°, underfill material volumes may be reduced andsizes of keep out zones of the electrical device may be reduced. Thus,the size of the electrical device may be reduced, for example,

The first fillet 705 is formable by a thixotropic fillet material. Thethixotropic fillet material may be similar or identical to the filletmaterial described in connection with FIGS. 1A to 5B.

The (first) fillet 705 may include one or more or all of the features ofthe fillet formable by the thixotropic material described in connectionwith FIGS. 1 to 6. For example, an angle between a slope at a middle ofthe (first) fillet 705 and a surface 708 (e.g. a first lateral sidesurface) of the carrier 202 may lie between 20° and 85° (or e.g. between30° and 75°, or e.g. between 40° and 70°). For example, a maximum (oraverage) width of the first fillet 705 formable by (or formed by) thefillet material from the edge 206 of the semiconductor die 201 may beless than 5.0 mm (or e.g. less than 4.0 mm, or e.g. less than 3.0 mm, ore.g. less than 2.0 mm).

The electrical device 700 may further include a second fillet formableby an underfill material located at at least one further edge of thesemiconductor die. The underfill material for the second fillet may beidentical to an underfill material located in the gap between thesemiconductor die 201 and the carrier 202, for example. The underfillmaterial may be similar or identical to the underfill material describedin connection with FIGS. 1A to 6.

As shown in FIG. 7B, the middle of the fillet may be a point, M, at thesurface of the fillet in a cross-section of the fillet. The (middle)point M may be located at the surface of the fillet at 50% (or e.g.between 40% and 60%) of a height, h, between a highest point of thefillet and a surface of the carrier.

The (second) fillet may include one or more or all of the features ofthe fillet formable by the underfill material described in connectionwith FIGS. 1 to 6. For example, an angle between a slope at a middle ofthe second fillet and the surface 708 of the carrier 202 lies between20° and 85°. For example, a maximum (or average) width of the secondfilet from the further edge of the semiconductor die 201 may be lessthan 5.0 mm (or e.g. less than 4.0 mm, or e.g. less than 3.0 mm, or e.g.less than 2.0 mm).

A maximum (or average) width of the second fillet from the further edgeof the semiconductor die 201 may be at least 10% (or e.g. at least 20%larger than, or e.g. at least 30% larger than) a maximum (or average)width of the first fillet from the edge of the semiconductor die.

An angle between a slope at a middle of the first fillet and a surfaceof the carrier 202 may be at least 10% (or e.g. at least 20% largerthan, or e.g. at least 30% larger than) an angle between a slope at amiddle of the second and the surface of the carrier 202.

An average width of a keep out zone at the edge of the semiconductor die201 at which the first fillet 705 is formed may be smaller than anaverage width of a keep out zone at the further edge of thesemiconductor die 201 at which the second fillet is formed.

More details and aspects are mentioned in connection with the examplesdescribed above or below. The examples shown in FIGS. 1 to 7 maycomprise one or more optional additional features corresponding to oneor more aspects mentioned in connection with the proposed concept or oneor more examples described above (e.g. FIGS. 1 to 6) or below

Various examples relate to a two-material multi-part dispense process toreduce underfill keep-out zones on flip chip packages. The variousexamples may relate to dispenses, flip-chip packages, keep-out zones,underfill processes, flip-chip land/ball/pin grid arrays (FC-XGA)packages. The various examples may relate to high volume architecture,or examples embodied in computer system architecture features andinterfaces made in high volumes. The various examples may relate to IA,devices (e.g., transistors) and associated manufacturing processes. Thevarious examples may be used as a packaging and/or assembly for centralprocessing units (CPUs) and/or processors, chipsets, graphics devices,wireless devices, multi-chip or 3D package including a CPU incombination with other devices, memory (e.g. FLASH/DRAM/SRAM), and/orboards (e.g. motherboards).

The various examples may have a unique combination ofcomponents/techniques, which may reduce the complexities compared toother structures and techniques. The use of two different materials forunder-filling and filleting adds another interface on the package(between the two materials), for example. Techniques may be used tomitigate risks, such as by the characterization of the interface interms of its ability to withstand different thermomechanical andhygroscopic stresses to reduce delamination initiation or the effects ofa propagation region.

The various examples may enable a reduction in package sizes, areduction in package layer count (by avoiding solder resist openings forkeep-out zone KOZ reduction), and/or a reduction in process costs (byavoiding to have a barrier material), for example.

Aspects and features (e.g. the semiconductor die, the carrier, the atleast one solder structure, the gap between the semiconductor die andthe carrier, the fillet formable by the thixotropic material, the filletformable by the underfill material, the first fillet, the second fillet,the first edge, the second edge, the dispensing edge, the third edge andthe fillet structure) mentioned in connection with one or more specificexamples may be combined with one or more of the other examples.

There is a demand for electrical devices and/or methods for formingelectrical devices with reduced complexity, low cost, and reducedthroughput. This demand may be satisfied by the subject matter of theexamples.

In the following examples pertain to further examples. Example 1 is amethod for forming an electrical device, the method comprising attachinga semiconductor die on a carrier;

dispensing a fillet material at at least one edge of the semiconductordie arranged on the carrier; and dispensing an underfill material into agap between the semiconductor die and the carrier after dispensing thefillet material.

In example 2, the subject matter of example 1 can optionally include thefillet material comprising a thixotropic material.

In example 3, the subject matter of example 1 or 2 can optionallyinclude the thixotropic index of the fillet material being greater than1.0.

In example 4, the subject matter of any of examples 1 to 3 canoptionally include the fillet material comprising filler particles,wherein the filler particles are selected from at least one of the groupcomprising silica particles, graphite particles, silver particles,nickel particles, alumina particles, and boron nitride particles.

In example 5, the subject matter of example 4 can optionally include thefiller particles being embedded in a matrix material, wherein the matrixmaterial is selected from at least one of the group comprisingpolyepoxies, polyacrylates, polyamide, polyanhydrides, polyamines,phenolics.

In example 6, the subject matter of example 4 or 5 can optionallyinclude at least 10% of the fillet material being filler particles.

In example 7, the subject matter of any of examples 1 to 6 canoptionally include the fillet material being different from theunderfill material.

In example 8, the subject matter of any of examples 1 to 7 canoptionally include the underfill material being selected from at leastone of the group comprising polyepoxies, polyacrylates, polyamide,polyanhydrides, polyamines, phenolics.

In example 9, the subject matter of any of examples 1 to 8 canoptionally include curing the fillet material to form a fillet at the atleast one edge of the semiconductor die before dispensing the underfillmaterial.

In example 10, the subject matter of any of examples 1 to 9 canoptionally include curing the fillet material and the underfill materialin the same curing process after dispensing the underfill material.

In example 11, the subject matter of any of examples 1 to 10 canoptionally include the fillet material being dispensed at a first edgeof the semiconductor die and at an opposite second edge of thesemiconductor die.

In example 12, the subject matter of example 11 can optionally includethe underfill material being dispensed into the gap between thesemiconductor die and the carrier from a dispensing edge of thesemiconductor die, wherein the dispensing edge of the semiconductor dieis orthogonal to the first edge of the semiconductor die and the secondedge of the semiconductor die.

In example 13, the subject matter of example 12 can optionally includethe underfill material being dispensed from the dispensing edge of thesemiconductor die towards an opposite third edge of the semiconductordie through the gap between the semiconductor die and the carrier.

In example 14, the subject matter of any of examples 1 to 13 canoptionally include the fillet material being dispensed to form a filletstructure comprising the fillet material between the first semiconductordie and a neighboring second semiconductor die arranged on the carrier,wherein a first portion of the fillet structure is dispensed at an edgeof the first semiconductor die and wherein a second portion of thefillet structure is dispensed at an edge of the second semiconductordie.

In example 15, the subject matter of example 14 can optionally includean average distance between neighboring edges of the first semiconductordie and the second semiconductor die greater than 0.1 mm.

In example 16, the subject matter of example 12 can optionally includefillet material being dispensed at the dispensing edge of thesemiconductor die after dispensing the underfill material.

In example 17, the subject matter of example 12 can optionally includefillet material being dispensed at a third edge of the semiconductor dielocated opposite to the dispensing edge of the semiconductor die afterdispensing the underfill material.

In example 18, the subject matter of any of examples 1 to 17 canoptionally include the carrier being a printed circuit board, aflip-chip substrate or a lead frame.

In example 19, the subject matter of any of examples 1 to 18 canoptionally include the attaching of the semiconductor die on the carriercomprising soldering the semiconductor die to the carrier so that atleast one solder structure is located in the gap between thesemiconductor die and the carrier.

In example 20, the subject matter of any of examples 1 to 19 canoptionally include the fillet material being dispensed from a jettingdispenser, from a piston dispenser, from an auger dispenser, or from apressure-time dispenser.

Example 21 is an electrical device, comprising a semiconductor diearranged on a carrier; at least one fillet located at at least one edgeof the semiconductor die, wherein the at least one fillet is formable bya thixotropic fillet material; and an underfill material located in agap between the semiconductor die and the carrier.

In example 22, the subject matter of example 21 can optionally includethe thixotropic fillet material being different from the underfillmaterial.

In example 23, the subject matter of example 21 or 22 can optionallyinclude the fillet comprising filler particles, wherein the fillerparticles are selected from at least one of the group comprising silicaparticles, graphite particles, silver particles, nickel particles,alumina particles, and boron nitride particles.

In example 24, the subject matter of any of examples 21 to 23 canoptionally include at least 10% of the fillet material being fillerparticles.

In example 25, the subject matter of any of examples 21 to 24 canoptionally include a first fillet formable by the thixotropic filletmaterial being located at a first edge of the semiconductor die and asecond fillet formable by the thixotropic fillet material being locatedat an opposite second edge of the semiconductor die.

In example 26, the subject matter of any of examples 21 to 25 canoptionally include a fillet structure formable by the thixotropic filletmaterial located between the first semiconductor die and a neighboringsecond semiconductor die, wherein a first portion of the filletstructure forms a fillet located at an edge of the first semiconductordie, and wherein a second portion of the fillet structure forms a filletlocated at an edge of the second semiconductor die.

In example 27, the subject matter of example 26 can optionally includean average distance between the first semiconductor die and the secondsemiconductor die greater than 0.1 mm.

In example 28, the subject matter of any of examples 21 to 27 canoptionally include the carrier being a printed circuit board, aflip-chip substrate or a lead frame.

In example 29, the subject matter of any of examples 21 to 28 canoptionally include the semiconductor die being connected to the carriervia at least one solder structure located in the gap between thesemiconductor die and the carrier.

In example 30, the subject matter of any of examples 21 to 29 canoptionally include a angle between a slope at a middle of the fillet anda surface of the carrier lying between 20° and 85°.

In example 31, the subject matter of example 30 can optionally includethe middle of the fillet being a point at the surface of the fillet in across-section of the fillet, wherein the point is located at the surfaceof the fillet at 50% of a height between a highest point of the filletand a surface of the carrier, wherein the cross-section of the fillet isat a middle of the at least one edge of the semiconductor die.

In example 32, the subject matter of any of examples 21 to 31 canoptionally include a maximum width of the at least one fillet from theat least one further edge of the semiconductor die being less than 5.0mm.

In example 33, the subject matter of any of examples 21 to 32 canoptionally include at least one fillet formable by the underfillmaterial located at at least one edge of the semiconductor die.

In example 34, the subject matter of example 33 can optionally includean average width of a keep out zone at an edge of the semiconductor dieat which the at least one fillet formed by the thixotropic filletmaterial is formed being smaller than an average width of a keep outzone at an edge of the semiconductor die at which at least one filletformed by the underfill material is formed.

Example 35 is an electrical device, comprising a semiconductor diearranged on a carrier; and a fillet located at at least one edge of thesemiconductor die, wherein an angle between a slope at a middle of thefillet and a surface of the carrier lies between 20° and 85°.

In example 36, the subject matter of example 35 can optionally includethe middle of the fillet being a point at the surface of the fillet in across-section of the fillet, wherein the point is located at the surfaceof the fillet at 50% of a height between a highest point of the filletand a surface of the carrier, wherein the cross-section of the fillet isat a middle of the at least one edge of the semiconductor die.

In example 37, the subject matter of example 35 or 36 can optionallyinclude a maximum width of the fillet from the edge of the semiconductordie being less than 5.0 mm.

In example 38, the subject matter of any of examples 35 to 57 canoptionally include the fillet being formable by a thixotropic filletmaterial.

In example 39, the subject matter of any of examples 36 to 38 canoptionally include a second fillet formable by an underfill materiallocated at at least one further edge of the semiconductor die, whereinan angle between a slope at a middle of the fillet and a surface of thecarrier lies between 20° and 85°.

In example 40, the subject matter of example 39 can optionally include amaximum width of the second fillet from the further edge of thesemiconductor die being less than 5.0 mm.

In example 41, the subject matter of example 39 or 40 can optionallyinclude the underfill material for forming the second fillet beingidentical to an underfill material located in a gap between thesemiconductor die and the carrier.

In example 42, the subject matter of any of examples 39 to 41 canoptionally include an average width of a keep out zone at an edge of thesemiconductor die at which the first fillet is formed being smaller thanan average width of a keep out zone at an edge of the semiconductor dieat which the second fillet is formed.

Example 43 is a computer readable storage medium having stored thereon aprogram having a program code for performing the method of any ofexamples 1 to 20, when the program is executed on a computer orprocessor.

Examples may further provide a computer program having a program codefor performing one of the above methods, when the computer program isexecuted on a computer or processor. A person of skill in the art wouldreadily recognize that acts of various above-described methods may beperformed by programmed computers. Herein, some examples are alsointended to cover program storage devices, e.g., digital data storagemedia, which are machine or computer readable and encodemachine-executable or computer-executable programs of instructions,wherein the instructions perform some or all of the acts of theabove-described methods. The program storage devices may be, e.g.,digital memories, magnetic storage media such as magnetic disks andmagnetic tapes, hard drives, or optically readable digital data storagemedia. Further examples are also intended to cover computers programmedto perform the acts of the above-described methods or (field)programmable logic arrays ((F)PLAs) or (field) programmable gate arrays((F)PGAs), programmed to perform the acts of the above-describedmethods.

The description and drawings merely illustrate the principles of thedisclosure. It will thus be appreciated that those skilled in the artwill be able to devise various arrangements that, although notexplicitly described or shown herein, embody the principles of thedisclosure and are included within its spirit and scope. Furthermore,all examples recited herein are principally intended expressly to beonly for pedagogical purposes to aid the reader in understanding theprinciples of the disclosure and the concepts contributed by theinventor(s) to furthering the art, and are to be construed as beingwithout limitation to such specifically recited examples and conditions.Moreover, all statements herein reciting principles, aspects, andexamples of the disclosure, as well as specific examples thereof, areintended to encompass equivalents thereof.

Functional blocks denoted as “means for . . . ” (performing a certainfunction) shall be understood as functional blocks comprising circuitrythat is configured to perform a certain function, respectively. Hence, a“means for s.th.” may as well be understood as a “means configured to orsuited for s.th.”. A means configured to perform a certain functiondoes, hence, not imply that such means necessarily is performing thefunction (at a given time instant).

It should be appreciated by those skilled in the art that any blockdiagrams herein represent conceptual views of illustrative circuitryembodying the principles of the disclosure. Similarly, it will beappreciated that any flow charts, flow diagrams, state transitiondiagrams, pseudo code, and the like represent various processes whichmay be substantially represented in computer readable medium and soexecuted by a computer or processor, whether or not such computer orprocessor is explicitly shown.

Furthermore, the following claims are hereby incorporated into theDetailed Description, where each claim may stand on its own as aseparate example. While each claim may stand on its own as a separateexample, it is to be noted that—although a dependent claim may refer inthe claims to a specific combination with one or more other claims—otherexamples may also include a combination of the dependent claim with thesubject matter of each other dependent or independent claim. Suchcombinations are proposed herein unless it is stated that a specificcombination is not intended. Furthermore, it is intended to include alsofeatures of a claim to any other independent claim even if this claim isnot directly made dependent to the independent claim.

It is further to be noted that methods disclosed in the specification orin the claims may be implemented by a device having means for performingeach of the respective acts of these methods.

Further, it is to be understood that the disclosure of multiple acts orfunctions disclosed in the specification or claims may not be construedas to be within the specific order. Therefore, the disclosure ofmultiple acts or functions will not limit these to a particular orderunless such acts or functions are not interchangeable for technicalreasons. Furthermore, in some examples a single act may include or maybe broken into multiple sub acts. Such sub acts may be included and partof the disclosure of this single act unless explicitly excluded.

1. A method for forming an electrical device, the method comprising:attaching a semiconductor die on a carrier; dispensing a fillet materialat at least one edge of the semiconductor die arranged on the carrier;and dispensing an underfill material into a gap between thesemiconductor die and the carrier after dispensing the fillet material.2. The method according to claim 1, wherein the fillet materialcomprises a thixotropic material.
 3. The method according to claim 1,wherein a thixotropic index of the fillet material is greater than 1.0.4. The method according to claim 1, wherein the fillet materialcomprises filler particles, wherein the filler particles are selectedfrom at least one of the group comprising silica particles, graphiteparticles, silver particles, nickel particles, alumina particles, andboron nitride particles.
 5. The method according to claim 4, wherein thefiller particles are embedded in a matrix material, wherein the matrixmaterial is selected from at least one of the group comprisingpolyepoxies, polyacrylates, polyamide, polyanhydrides, polyamines, andphenolics.
 6. The method according to claim 4, wherein at least 10% ofthe fillet material are filler particles.
 7. The method according toclaim 1, wherein the fillet material is different from the underfillmaterial.
 8. The method according to claim 1, wherein the underfillmaterial is selected from at least one of the group comprisingpolyepoxies, polyacrylates, polyamide, polyanhydrides, polyamines, andphenolics.
 9. The method according to claim 1, further comprising curingthe fillet material to form a fillet at the at least one edge of thesemiconductor die before dispensing the underfill material.
 10. Themethod according to claim 1, further comprising curing the filletmaterial and the underfill material in the same curing process afterdispensing the underfill material.
 11. The method according to claim 1,wherein the fillet material is dispensed at a first edge of thesemiconductor die and at an opposite second edge of the semiconductordie.
 12. The method according to claim 11, wherein the underfillmaterial is dispensed into the gap between the semiconductor die and thecarrier from a dispensing edge of the semiconductor die, wherein thedispensing edge of the semiconductor die is orthogonal to the first edgeof the semiconductor die and the second edge of the semiconductor die.13. The method according to claim 12, wherein the underfill material isdispensed from the dispensing edge of the semiconductor die towards anopposite third edge of the semiconductor die through the gap between thesemiconductor die and the carrier.
 14. The method according to claim 1,wherein the fillet material is dispensed to form a fillet structurecomprising the fillet material between the first semiconductor die and aneighboring second semiconductor die arranged on the carrier, wherein afirst portion of the fillet structure is dispensed at an edge of thefirst semiconductor die and wherein a second portion of the filletstructure is dispensed at an edge of the second semiconductor die. 15.The method according to claim 14, wherein an average distance betweenneighboring edges of the first semiconductor die and the secondsemiconductor die is greater than 0.1 mm.
 16. An electrical device,comprising: a semiconductor die arranged on a carrier; at least onefillet located at at least one edge of the semiconductor die, whereinthe at least one fillet is formable by a thixotropic fillet material;and an underfill material located in a gap between the semiconductor dieand the carrier.
 17. The electrical device according to claim 16,wherein the thixotropic fillet material is different from the underfillmaterial.
 18. The electrical device according to claim 16, wherein afirst fillet formable by the thixotropic fillet material is located at afirst edge of the semiconductor die and a second fillet formable by thethixotropic fillet material is located at an opposite second edge of thesemiconductor die.
 19. The electrical device according to claim 16,comprising a fillet structure formable by the thixotropic filletmaterial located between the first semiconductor die and a neighboringsecond semiconductor die, wherein a first portion of the filletstructure forms a fillet located at an edge of the first semiconductordie, and wherein a second portion of the fillet structure forms a filletlocated at an edge of the second semiconductor die.
 20. The electricaldevice according to claim 19, wherein an average distance between thefirst semiconductor die and the second semiconductor die is greater than0.1 mm.
 21. The electrical device according to claim 16, furthercomprising at least one fillet formable by the underfill materiallocated at at least one further edge of the semiconductor die.
 22. Anelectrical device, comprising: a semiconductor die arranged on acarrier; and a fillet located at at least one edge of the semiconductordie, wherein an angle between a slope at a middle of the fillet and asurface of the carrier lies between 20° and 85°.
 23. The electricaldevice according to claim 22, wherein the middle of the fillet is apoint at the surface of the fillet in a cross-section of the fillet,wherein the point is located at the surface of the fillet at 50% of aheight between a highest point of the fillet and a surface of thecarrier, wherein the cross-section of the fillet is at a middle of theat least one edge of the semiconductor die.
 24. The electrical deviceaccording to claim 22, wherein a maximum width of the fillet from theedge of the semiconductor die is less than 5.0 mm.
 25. The electricaldevice according to claim 22, wherein the fillet is formable by athixotropic fillet material.